Preparation of Ternary (Ni3Pb2S2) Thin Films by Chemical Bath Deposition Method
S. M. Ho *
Faculty of Science, Technology, Engineering and Mathematics, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia
*Author to whom correspondence should be addressed.
Abstract
In this work, the synthesis of Ni3Pb2S2 thin films using chemical bath deposition method was carried out. The films were deposited onto glass substrate from aqueous solutions in the absence of complexing agent. The atomic force microscopy analysis showed that the non-uniformity surface with island shaped grains. Meanwhile, in optical properties studies, the band gap was calculated to be 1.42 eV, from its UV-Visible absorption spectrum.
Keywords: Thin films, atomic force microscopy, ternary compound, semiconductor